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Data Sheet
FEATURES
Integrated SiGe PIN photodiode, transimpedance amplifier (TIA), and limiting amplifier (LA)
Power monitor output: 1.0 A/W at O band wavelengths 50 µm diameter germanium photodiode Input sensitivity
POMA = −16.5 dBm PAVE = −17.3 dBm (ER = 6 dB) PRBS31 at 10.52 Gbps, BER = 10−12, λ = 1270 nm, 1290 nm,
1300 nm, 1310 nm, and 1330 nm Antireflective coating (ARC) optimized to 1310 nm Single 3.3 V supply Power dissipation: 102 mW Differential output swing: 460 mV p-p On-chip power monitor function Die size: 0.835 mm × 0.675 mm
APPLICATIONS
Optical module receivers up to 11.