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HMC-ABH241 - GaAs HEMT MMIC MEDIUM POWER Amplifier

Description

The HMC-ABH241 is a four stage GaAs HEMT MMIC Medium Power Amplifier which operates between 50 and 66 GHz.

The HMC-ABH241 provides 24 dB of gain, and an output power of +17 dBm at 1dB compression from a +5V supply voltage.

Features

  • Output IP3: +25 dBm P1dB: +17 dBm Gain: 24 dB Supply Voltage: +5V 50 Ohm Matched Input/Output Die Size: 3.2 x 1.42 x 0.1 mm Functional Diagram General.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Linear & Power Amplifiers - CHIP v03.0412 Typical Applications This HMC-ABH241 is ideal for: • Short Haul / High Capacity Links • Wireless LAN Bridges • Military & Space HMC-ABH241 GaAs HEMT MMIC MEDIUM POWER Amplifier, 50 - 66 GHz Features Output IP3: +25 dBm P1dB: +17 dBm Gain: 24 dB Supply Voltage: +5V 50 Ohm Matched Input/Output Die Size: 3.2 x 1.42 x 0.1 mm Functional Diagram General Description The HMC-ABH241 is a four stage GaAs HEMT MMIC Medium Power Amplifier which operates between 50 and 66 GHz. The HMC-ABH241 provides 24 dB of gain, and an output power of +17 dBm at 1dB compression from a +5V supply voltage. All bond pads and the die backside are Ti/Au metallized and the amplifier device is fully passivated for reliable operation.
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