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HMC-ALH216 - GaAs HEMT MMIC LOW NOISE AMPLIFIER

General Description

The HMC-ALH216 is a GaAs MMIC HEMT Wideband Low Noise Amplifier die which operates between 14 and 27 GHz.

The amplifier provides 18 dB of gain, 2.5 dB noise figure and +14 dBm of output power at 1 dB gain compression while requiring only 90 mA from a +4V supply voltage.

Key Features

  • Noise Figure: 2.5 dB @ 20 GHz Gain: 18 dB P1dB Output Power: +14 dBm Supply Voltage: +4V @ 90 mA Die Size: 2.25 x 1.58 x 0.1 mm Functional Diagram General.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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LOW NOISE AMPLIFIERS - CHIP v03.0209 1 Typical Applications This HMC-ALH216 is ideal for: • Point-to-Point Radios • Point-to-Multi-Point Radios • Military & Space • Test Instrumentation HMC-ALH216 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 14 - 27 GHz Features Noise Figure: 2.5 dB @ 20 GHz Gain: 18 dB P1dB Output Power: +14 dBm Supply Voltage: +4V @ 90 mA Die Size: 2.25 x 1.58 x 0.1 mm Functional Diagram General Description The HMC-ALH216 is a GaAs MMIC HEMT Wideband Low Noise Amplifier die which operates between 14 and 27 GHz. The amplifier provides 18 dB of gain, 2.5 dB noise figure and +14 dBm of output power at 1 dB gain compression while requiring only 90 mA from a +4V supply voltage. The HMC-ALH216 amplifier is ideal for integration into Multi-Chip-Modules (MCMs) due to its small size.