HMC414MS8G Description
The HMC414MS8G & HMC414MS8GE are high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifiers which operate between 2.2 and 2.8 GHz. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance. With a minimum of external ponents, the amplifier provides 20 dB of gain, +30 dBm of saturated power at 32% PAE from a +5V...
HMC414MS8G Key Features
- HMC414MS8G Evaluation Board
- AN-1363: Meeting Biasing Requirements of Externally
- Broadband Biasing of Amplifiers General Application Note
- MMIC Amplifier Biasing Procedure Application Note
- Thermal Management for Surface Mount ponents General Application Note Data Sheet
- HMC414 Data Sheet