HMC583LP5E Description
The HMC583LP5 & HMC583LP5E are GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCOs. The HMC583LP5 & HMC583LP5E integrate resonators, negative resistance devices, varactor diodes.
HMC583LP5E Key Features
- 12.8 GHz Fo/2 = 5.75
- 6.4 GHz
- 12.8 5.75
- 12.8 GHz
HMC583LP5E Applications
- Point to Point/Multipoint Radio