HMC753
FEATURES
Noise figure: 1.5 d B at 4 GHz (see Figure 10) Gain
16.5 d B at 1 GHz to 6 GHz 14 d B at 6 GHz to 11 GHz Output power for 1 d B pression (P1d B): 18 d Bm at 1 GHz to 6 GHz Supply voltage (VDD): 5 V at 55 m A Output third-order intercept (IP3): 30 d Bm at 1 GHz to 6 GHz 50 Ω matched input/output (I/O) 24-lead lead frame chip scale package (LFCSP): 16 mm2
APPLICATIONS
Point to point radios Point to multipoint radios Military and space Test instrumentation
GENERAL DESCRIPTION
The HMC753 is a gallium arsenide (Ga As), monolithic microwave integrated circuit (MMIC), low noise, wideband amplifier housed in a leadless, 4 mm × 4 mm LFCSP. The amplifier operates between 1 GHz and 11 GHz, providing up to 16.5 d B of small signal gain at 1 GHz to 6 GHz, a 1.5 d B noise figure at 4 GHz (see Figure 10), and an output IP3 of 30 d Bm at 1 GHz to 6 GHz, while requiring only 55 m A from a 5 V supply.
1 GHz to 11 GHz, Ga As, HEMT, MMIC Low Noise Amplifier HMC753
FUNCTIONAL BLOCK DIAGRAM
24 GND 23 NIC 22...
