HMC756
Features
Saturated Output Power: +33 d Bm @ 28% PAE High Output IP3: +41 d Bm High Gain: 23 d B DC Supply: +7V @ 790m A DC Blocked RF I/Os No External Matching Required Die Size: 2.4 x 1.6 x 0.1 mm
General Description
The HMC756 is a three stage Ga As PHEMT MMIC 1 Watt Power Amplifier which operates between 16 and 24 GHz. The HMC756 provides 23 d B of gain, and +33 d Bm of saturated output power at 28% PAE from a +7V supply. The RF I/Os are DC blocked and matched to 50 Ohms for ease of integration into Multi-Chip-Modules (MCMs). All data is taken with the chip in a 50 Ohm test fixture connected via 0.025 mm (1 mil) diameter wire bonds of length 0.31 mm (12 mils).
Electrical Specifications, TA = +25° C, Vdd = Vdd1, = Vdd2 = +7V, Idd = 790m A [1]
Parameter
Min.
Typ.
Max.
Min.
Typ. Max.
Frequency Range
- 20
- 24
Gain
19 22
20 23
Gain Variation Over Temperature
Input Return Loss
16 15
Output Return Loss
18 16
Output Power for 1 d B pression (P1d B)
29 31
30...
