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Aonetek Semiconductor

ME9926 Datasheet Preview

ME9926 Datasheet

Dual N-Channel High Density Trench MOSFET

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Aonetek Semiconductor Co., LTD.
Dual N-Channel High Density Trench MOSFET
ME9926
PRODUCT SUMMARY
VDSS
ID RDS(on) (m-ohm) Max
6.0A
28 @ VGS = 4.5V
20V
5.2A
44 @ VGS = 2.5V
FEATURES
Super high dense cell trench design for low RDS(on).
Rugged and reliable.
Ideal for Li ion battery pack application.
SOP-8
D1 D1 D2 D2
876
5
1
123
4
S1 G1 S2 G2
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuousa @ TA = 25 °C
-Pulse b
Drain-Source Diode Forward Currenta
Maximum Power Dissipationa
TA=25°C
TA=75°C
Operating Junction and Storage
Temperature Range
Symbol
VDS
VGS
ID
IDM
IS
PD
TJ,TSTG
Limit
20
± 12
6
24
1.7
2.0
1.3
- 55 to 150
Unit
V
V
A
A
A
W
°C
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambienta
Note
a. Surface Mounted on FR4 Board , t 10sec .
b. Pulse width limited by maximum junction temperature.
RthJA
62.5 °C/W




Aonetek Semiconductor

ME9926 Datasheet Preview

ME9926 Datasheet

Dual N-Channel High Density Trench MOSFET

No Preview Available !

ME9926
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
Parameter
Symbol
Condition
Min Typc Max Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS VGS = 0V , ID = 250uA
20
V
Zero Gate Voltage Drain Current
IDSS VDS = 20V , VGS = 0V
1 uA
Gate-Body Leakage
b
ON CHARACTERISTICS
IGSS VGS = ±12V, VDS = 0V
±100 nA
Gate Threshold Voltage
VGS(th) VDS = VGS , ID = 250uA 0.6 0.9 1.5 V
Drain-Source On-State Resistance
RDS(on)
VGS = 4.5V , ID = 6A
VGS = 2.5V , ID = 5.2A
DRAIN-SOURCE DIODE CHARACTERISTICS b
22 28
m-ohm
34 44
Diode Forward Voltage
VSD
c
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
c
SWITCHING CHARACTERISTICS
VGS = 0V , IS = 1.7A
VDS = 8V , VGS = 0V
f = 1.0MHz
1.2 V
553 pF
144 pF
120 pF
Turn-On Delay Time
Rise Time
tD(ON)
tr
VDD = 10V , ID = 1A
VGEN = 4.5V
9.6 ns
6.3 ns
Turn-Off Delay Time
Fall Time
tD(OFF)
tf
RL = 10 ohm
RGEN = 6 ohm
30 ns
6.5 ns
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Note
b. Pulse Test Pulse width ≤ 300us , Duty Cycle ≤ 2% .
c. Guaranteed by design , not subject to production testing .
Qg
VDS = 10V , ID = 3A
Qgs
VGS = 4.5V
Qgd
6.2 nC
1.6 nC
1.5 nC


Part Number ME9926
Description Dual N-Channel High Density Trench MOSFET
Maker Aonetek Semiconductor
Total Page 4 Pages
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