VBsemi Electronics ME9926
Dual N-Channel MOSFET
| Part No. | ME9926 |
|---|---|
| Datasheet | ME9926 Download |
| Manufacturer | VBsemi Electronics |
| Description | Dual N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Halogen-free According to IEC 61249-2-21 Definition● TrenchFET® Power MOSFET
● 100 % Rg Tested
● Compliant to RoHS Directive 2002/95/EC D1 D2 G1 G2 S1 N-Channel MOSFET S2 N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C ID Pulsed Drain Current (10 µs Pulse Width) IDM Continuous Source Current (Diode Conduction)a IS Maximum Power Dissipationa TA = 25 °C TA = 70 °C PD Operating Junction and Storage Temperature Range TJ, Tstg Limit 20 ± 12 7.1 5.7 40 1.7 2 1.3 - 55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes: a. Surface Mounted on FR4 board, t ≤ 10 s. Symbol RthJA Limit 62.5 Unit V A W °C Unit °C/W 1 ME9926 SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current...
