ME9926 - Dual N-Channel High Density Trench MOSFET

Features

Super high dense cell trench design for low RDS(on).
Rugged and reliable.
Ideal for Li ion battery pack.

ME9926 Dual N-Channel High Density Trench MOSFET by Aonetek Semiconductor - Datasheet Preview — Datasheet preview – ME9926

Datasheet Details

Part number	ME9926
Manufacturer	Aonetek Semiconductor
File Size	866.09 KB
Description	Dual N-Channel High Density Trench MOSFET
Datasheet	ME9926 Datasheet
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Aonetek Semiconductor Co., LTD. Dual N-Channel High Density Trench MOSFET ME9926 PRODUCT SUMMARY VDSS ID RDS(on) (m-ohm) Max 6.0A 28 @ VGS = 4.5V 20V 5.2A 44 @ VGS = 2.5V FEATURES ●Super high dense cell trench design for low RDS(on). ●Rugged and reliable. ●Ideal for Li ion battery pack application. SOP-8 D1 D1 D2 D2 876 5 1 123 4 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuousa @ TA = 25 °C -Pulse b Drain-Source Diode Forward Currenta Maximum Power Dissipationa TA=25°C TA=75°C Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IS PD TJ,TSTG Limit 20 ± 12 6 24 1.7 2.0 1.

Published: Jun 6, 2015 |