ME9926 Description
Aonetek Semiconductor Co., LTD. Dual N-Channel High Density Trench MOSFET ME9926 PRODUCT SUMMARY VDSS ID RDS(on) (m-ohm) Max 6.0A 28 @ VGS = 4.5V 20V 5.2A 44 @ VGS = 2.5V.
ME9926 Key Features
- Super high dense cell trench design for low RDS(on). -Rugged and reliable. -Ideal for Li ion battery pack application