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Aonetek Semiconductor Co., LTD. Dual N-Channel High Density Trench MOSFET
ME9926
PRODUCT SUMMARY
VDSS
ID RDS(on) (m-ohm) Max
6.0A
28 @ VGS = 4.5V
20V
5.2A
44 @ VGS = 2.5V
FEATURES
●Super high dense cell trench design for low RDS(on). ●Rugged and reliable. ●Ideal for Li ion battery pack application.
SOP-8
D1 D1 D2 D2
876
5
1
123
4
S1 G1 S2 G2
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage
Drain Current-Continuousa @ TA = 25 °C -Pulse b
Drain-Source Diode Forward Currenta
Maximum Power Dissipationa
TA=25°C TA=75°C
Operating Junction and Storage Temperature Range
Symbol
VDS VGS ID IDM IS PD
TJ,TSTG
Limit
20 ± 12
6 24 1.7 2.0 1.
ME9926 Datasheet
