ME9926
ME9926 is Dual N-Channel High Density Trench MOSFET manufactured by Aonetek Semiconductor.
FEATURES
- Super high dense cell trench design for low RDS(on).
- Rugged and reliable.
- Ideal for Li ion battery pack application.
SOP-8
D1 D1 D2 D2
S1 G1 S2 G2
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage
Drain Current-Continuousa @ TA = 25 °C -Pulse b
Drain-Source Diode Forward Currenta
Maximum Power Dissipationa
TA=25°C TA=75°C
Operating Junction and Storage Temperature Range
Symbol
VDS VGS ID IDM IS PD
TJ,TSTG
Limit
20 ± 12
6 24 1.7 2.0 1.3
- 55 to 150
Unit
V V A A A W
°C
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambienta
Note a. Surface Mounted on FR4 Board , t ≤ 10sec . b. Pulse width limited by maximum junction temperature.
Rth JA
62.5 °C/W
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
Parameter
Symbol
Condition
Min Typc Max...
