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ME9926 - Dual N-Channel 2.5-V (G-S) MOSFET

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Matsuki

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ME9926 Dual N-Channel 2.5-V (G-S) MOSFET by Matsuki - Datasheet Preview — Datasheet preview – ME9926

Datasheet Details

Part number	ME9926
Manufacturer	Matsuki
File Size	622.19 KB
Description	Dual N-Channel 2.5-V (G-S) MOSFET
Datasheet	ME9926 Datasheet
Additional preview pages of the ME9926 datasheet.

Product details

Description

The ME9926 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

Features

RDS(ON)≦29mΩ@VGS=4.5V.
RDS(ON)≦42mΩ@VGS=2.5V.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.

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Published: Jun 6, 2015 |