ME9926
ME9926 is Dual N-Channel 2.5-V (G-S) MOSFET manufactured by Matsuki.
DESCRIPTION
The ME9926 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package.
FEATURES
- RDS(ON)≦29mΩ@VGS=4.5V
- RDS(ON)≦42mΩ@VGS=2.5V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current capability
APPLICATIONS
- Power Management in Note book
- Portable Equipment
- Battery Powered System
- Load Switch
- DSC
PIN CONFIGURATION
(SOP-8) Top View
Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted)
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current
Maximum Power Dissipation
Operating Junction Temperature
TA=25℃ TA=70℃
Thermal Resistance-Junction to Ambient-
Thermal Resistance-Junction to Case
Symbol VDSS VGSS ID IDM
RθJA
RθJC
Steady State
±12
-55 to 150
T≦10 sec
Steady State
50...
