2SK117
Apm JFET
Low Noise Amplifier Applications Silicon N Channel Junction Type
- High Yfs=15ms(typ)(VDS=10V,VGS=0)
- High VGDS=--30V
- Low noise:NF=1.0d B(typ)
(VDS=10V,ID=0.5m A,f=1k Hz,RG=1k )
- High input impedance:IGSS=-1n A,VGS=-30V)
Absolute Maximum rating at Ta=25
SYMBOL
VGDS IG
Tstg Tj
PARAMETER Gate-Drain voltage
Gate current storage temprature operating junction temperature Drain power dissipation
1:Drain 2:Gate 3:Source
MIN. 30 10 -55 -55 300
MAX.
+150 +125
TO-92
UNIT V m A m W
Electrical Characteristics at Ta=25
SYMBOL PARAMETER
CONDITIONS
IGSS
Gate cut-off current
VGS=-30V
V(BR)GDS G-D breakdown voltage
VDS=0,IG=-100u A
-30
IDSS
Drain current
VDS=10V,VGS=0
VGS(off) G-S cut-off voltage
VDS=10V,ID=0.1u A
-0.2
Yfs Forward transfer admittance VDS=10V,VGS=0 f=1khz 4.0
Ciss Input...
