Full PDF Text Transcription for 2SK117 (Reference)
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Apm JFET 2SK117 Low Noise Amplifier Applications Silicon N Channel Junction Type *High Yfs=15ms(typ)(VDS=10V,VGS=0) *High VGDS=--30V *Low noise:NF=1.0dB(typ) (VDS=10V,ID=...
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(VDS=10V,VGS=0) *High VGDS=--30V *Low noise:NF=1.0dB(typ) (VDS=10V,ID=0.5mA,f=1kHz,RG=1k ) *High input impedance:IGSS=-1nA,VGS=-30V) Absolute Maximum rating at Ta=25 SYMBOL VGDS IG Tstg Tj PD PARAMETER Gate-Drain voltage Gate current storage temprature operating junction temperature Drain power dissipation 1:Drain 2:Gate 3:Source MIN. 30 10 -55 -55 300 MAX. +150 +125 123 TO-92 UNIT V mA mW Electrical Characteristics at Ta=25 SYMBOL PARAMETER CONDITIONS MIN IGSS Gate cut-off current VGS=-30V V(BR)GDS G-D breakdown voltage VDS=0,IG=-100uA -30 IDSS Drain current VDS=10V,VGS=0 1.2 VGS(off) G-S cut-off voltage VDS=10V,ID=0.1uA
2SK117 Datasheet
