Austin Semiconductor, Inc.
64K x 1 SRAM
SRAM MEMORY ARRAY
AVAILABLE AS MILITARY
• SMD 5962-86015
• Speeds: 12, 15, 20, 25, 35, 45, 55, and 70ns
• Battery Backup: 2V data retention
• High-performance, low-power CMOS double-metal
• Single +5V (+10%) Power Supply
• Easy memory expansion with CE\
• All inputs and outputs are TTL compatible
Ceramic DIP (300 mil) C No. 105
• Operating Temperature Ranges
Industrial (-40oC to +85oC)
Military (-55oC to +125oC)
• 2V data retention/low power L
*Electrical characteristics identical to those provided for the 35ns
22-Pin DIP (C)
The Austin Semiconductor SRAM family employs
high-speed, low-power CMOS designs using a four-transistor
memory cell. Austin Semiconductor SRAMs are fabricated
using double-layer metal, double-layer polysilicon
For flexibility in high-speed memory applications, Austin
Semiconductor offers chip enable (CE\) on all organizations.
This enhancement can place the outputs in High-Z for
additional flexibility in system design. The X1 configuration
features separate data input and output.
Writing to these devices is accomplished when write
enable (WE\) and CE\ inputs are both LOW. Reading is
accomplished when WE\ remains HIGH and CE\ goes LOW.
The device offers a reduced power standby mode when
disabled. This allows system designs to achieve low standby
All devices operate from a single +5V power supply and
all inputs and outputs are fully TTL compatible.
For more products and information
please visit our web site at
Rev. 1.0 8/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.