AP2302 Key Features
- Support Both DDR I (1.25VTT) and DDR II (0.9VTT) Requirements Source and Sink Current up to 3A High Accuracy Output Volt
- Part: AP2302
- Manufacturer: BCD Semiconductor
- Size: 183.28 KB
Other AP2302 Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Advanced Power Electronics Corp |
AP2302AGN-HF | N-channel Enhancement-mode Power MOSFET |
|
Advanced Power Electronics Corp |
AP2302AGN-HF-3 | N-channel Enhancement-mode Power MOSFET |
|
Advanced Power Electronics Corp |
AP2302GN | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
Advanced Power Electronics Corp |
AP2302GN-HF | N-channel Enhancement mode Power MOSFET |
|
Advanced Power Electronics Corp |
AP2302GN-HF-3 | N-channel Enhancement mode Power MOSFET |
AP2302 Description
The AP2302 linear regulator is designed to meet the JEDEC specification SSTL-2 and SSTL-18 for termination of DDR-SDRAM. The regulator can sink or source up to 3A current continuously, offers enough current for most DDR applications. Output voltage is designed to track the reference voltage within a 2% (DDR I) and 3% (DDR II) tolerance for load regulation while preventing shooting through on the output stage.