Datasheet Details
| Part number | BLM9435 |
|---|---|
| Manufacturer | BELLING |
| File Size | 140.49 KB |
| Description | P-Channel Enhancement Mode Power MOSFET |
| Datasheet |
 BLM9435 Datasheet
|
|
|
| Part number | BLM9435 |
|---|---|
| Manufacturer | BELLING |
| File Size | 140.49 KB |
| Description | P-Channel Enhancement Mode Power MOSFET |
| Datasheet |
BLM9435 Datasheet
|
|
|
|
This device is produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance.
This device is particularly suited for low voltage application such as portable equipment, power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package.
APPLICATIONS • Load Switch • TFT panel power switch • DCDC conversion Pin Configuration Packaging Information Page 1 V1.0 P-Channel Enhancement Mode MOSFET BLM9435 Absolute Maximum Ratings @TA=25℃ unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Vdss Vgss -30 ±20 Drain Current (Note 1) Continuous TA=25°C Pulsed (Note 2) Id -5.4 -20 Total Power Dissipation (Note 1) Pd 1.5 Operating and Storage Junction Temperature Range Tj,Tstg -55~150 Unit V V A A W ℃ Electrical Characteristics @TA=25℃ unless otherwise noted Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage V(br)dss Vgs=0V,Id=-250uA -30 -36 -- V Zero Gate Voltage Drain Current Gate–Body Leakage Current Idss Vds=-24V,Vgs =0V -- -0.02 -1 uA Igss Vgs=±20V,Vds=0V -- ±1.5 ±100 nA ON CHARACTERISTICS Gate Threshold Voltage Vgs(th ) Vds=Vgs,Id=-250µA -1 -1.46 -3 V Drain-Source On-state Resistance Rds(on) Vgs=-10V,Id=-4.6A -Vgs=-4.5V,Id=-2A -- 51 68 60 82 mR Forward Transconductance Gfs Vds=-5V,Id=-6A -- 12 -- S DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Vds=-15V,Vgs=0V f =1MHz --- 550 60 --- pF Crss -- 50 -- SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-Off Delay Time Td(on) Td(off) Vds=-15V,Rl=2.5R, -- 8.6 -Vgs=-10V,Rgen=3R -- 28.2 -- ns DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Diode Forward Voltage Vsd Is=-1A,Vgs=0V -- -0.81 --
BLM9435 P-Channel Enhancement Mode MOSFET.
| Part Number | Description |
|---|---|
| BLM9435A | P-Channel Enhancement Mode Power MOSFET |
| BLM9926 | N-Channel Enhancement Mode Power MOSFET |
| BLM04N06 | 60V N-Channel Power MOSFET |
| BLM04N08 | 80V N-Channel Power MOSFET |
| BLM138K | N-Channel Enhancement Mode Power MOSFET |
| BLM2004NE | N-Channel Enhancement Mode Power MOSFET |
| BLM2006NE | N-Channel Enhancement Mode Power MOSFET |
| BLM2008E | N-Channel Enhancement Mode Power MOSFET |
| BLM2010E | N-Channel Enhancement Mode Power MOSFET |
| BLM22N10 | 100V N-Channel Power MOSFET |