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BLM9926 - N-Channel Enhancement Mode Power MOSFET

Description

The BLM9926 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS =20V,ID =6A RDS(ON) < 30mΩ @ VGS=4.5V RDS(ON) < 40mΩ @ VGS=2.5V Schematic diagram.
  • High density cell design for ultra low Rdson.
  • Fully characterized Avalanche voltage and current.

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Datasheet Details

Part number BLM9926
Manufacturer BELLING
File Size 477.64 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet BLM9926 Datasheet

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Full PDF Text Transcription

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Pb Free Product BLM9926 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The BLM9926 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES ● VDS =20V,ID =6A RDS(ON) < 30mΩ @ VGS=4.5V RDS(ON) < 40mΩ @ VGS=2.
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