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BLM9435 - P-Channel Enhancement Mode Power MOSFET

Description

This device is produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance.

Features

  • VDS VGS －30V ±20V RDSon TYP 51mR@-10V 68mR@-4V5 ID －5.4A.

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Datasheet Details

Part number BLM9435
Manufacturer BELLING
File Size 140.49 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet BLM9435 Datasheet

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Full PDF Text Transcription

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BLM9435 P-Channel Enhancement Mode MOSFET FEATURES VDS VGS －30V ±20V RDSon TYP 51mR@-10V 68mR@-4V5 ID －5.4A DESCRIPTION This device is produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device is particularly suited for low voltage application such as portable equipment, power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. APPLICATIONS • Load Switch • TFT panel power switch • DCDC conversion Pin Configuration Packaging Information Page 1 V1.
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