BPM0306CG datasheet, mosfet equivalent, BPS

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Features and benefits

* N-Channel VDS =30V, ID =6.5A RDS(ON) < 30mΩ @ VGS=10V
* P-Channel VDS =-30V, ID = -7A RDS(ON) < 33mΩ @ VGS=-10V
* High power and current handing capability .

Application

Features
* N-Channel VDS =30V, ID =6.5A RDS(ON) < 30mΩ @ VGS=10V
* P-Channel VDS =-30V, ID = -7A RDS(ON) < 33mΩ.

Description

The BPM0306CG uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs can be used in a wide variety of applications. Features
* N-Channel VDS =30V, ID =6.5A RDS(ON) < 30mΩ @ VGS=10V
* P-Chan.

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