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BPM0303CS - 30V Complementary MOSFET

General Description

The BPM0303CS uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

The complementary MOSFETs can be used in a wide variety of applications.

Key Features

  • N-Channel VDS =30V, ID =3.5A RDS(ON) < 58mΩ @ VGS=10V RDS(ON) < 95mΩ @ VGS=4.5V.
  • P-Channel VDS =-30V, ID = -2.7A RDS(ON) < 100mΩ @ VGS=-10V RDS(ON) < 150mΩ @ VGS=-4.5V.
  • High power and current handing capability Typical.

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Datasheet Details

Part number BPM0303CS
Manufacturer BPS
File Size 799.32 KB
Description 30V Complementary MOSFET
Datasheet download datasheet BPM0303CS Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BPM0303CS 30V Complementary MOSFET General Description The BPM0303CS uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs can be used in a wide variety of applications. Features  N-Channel VDS =30V, ID =3.5A RDS(ON) < 58mΩ @ VGS=10V RDS(ON) < 95mΩ @ VGS=4.5V  P-Channel VDS =-30V, ID = -2.7A RDS(ON) < 100mΩ @ VGS=-10V RDS(ON) < 150mΩ @ VGS=-4.5V  High power and current handing capability Typical Application Application  H-bridge  Inverters Ordering Information N-channel P-channel Figure 1. Schematic Diagram Part Number Package Operating Temperature Packing Type BPM0303CS SOT23-6L -40 ℃ to 105 ℃ Tape & Reel 3,000pcs/Reel Marking 0303 BPM0303CS_EN_DS_Rev.1.0 www.bpsemi.