BPM0303CS Description
The BPM0303CS uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The plementary MOSFETs can be used in a wide variety of applications.
BPM0303CS Key Features
- N-Channel VDS =30V, ID =3.5A RDS(ON) < 58mΩ @ VGS=10V RDS(ON) < 95mΩ @ VGS=4.5V
- P-Channel VDS =-30V, ID = -2.7A RDS(ON) < 100mΩ @ VGS=-10V RDS(ON) < 150mΩ @ VGS=-4.5V
- High power and current handing capability