BPM0306CG Description
The BPM0306CG uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The plementary MOSFETs can be used in a wide variety of applications.
BPM0306CG Key Features
- N-Channel VDS =30V, ID =6.5A RDS(ON) < 30mΩ @ VGS=10V
- P-Channel VDS =-30V, ID = -7A RDS(ON) < 33mΩ @ VGS=-10V
- High power and current handing capability