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BPM0306CG - 30V Complementary MOSFET

General Description

The BPM0306CG uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

The complementary MOSFETs can be used in a wide variety of applications.

Key Features

  • N-Channel VDS =30V, ID =6.5A RDS(ON) < 30mΩ @ VGS=10V.
  • P-Channel VDS =-30V, ID = -7A RDS(ON) < 33mΩ @ VGS=-10V.
  • High power and current handing capability Typical.

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Datasheet Details

Part number BPM0306CG
Manufacturer BPS
File Size 766.60 KB
Description 30V Complementary MOSFET
Datasheet download datasheet BPM0306CG Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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General Description The BPM0306CG uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs can be used in a wide variety of applications. Features  N-Channel VDS =30V, ID =6.5A RDS(ON) < 30mΩ @ VGS=10V  P-Channel VDS =-30V, ID = -7A RDS(ON) < 33mΩ @ VGS=-10V  High power and current handing capability Typical Application BPM0306CG 30V Complementary MOSFET Application  H-bridge  Inverters Ordering Information N-channel P-channel Figure 1. Schematic Diagram Part Number Package Operating Temperature Packing Type BPM0306CG SOP-8 -40 ℃ to 105 ℃ Tape & Reel 4,000pcs/Reel Marking BPM0306 XXXXXY CGXWW BPM0306CG_EN_DS_Rev.1.0 www.bpsemi.