BF910N60L mosfet equivalent, n-channel mosfet.
z VDS =600 V z ID =10A z RDS(ON) =0.65 Ω TYP(VGS=10V,ID=5.0A) z Low CRSS (typical 16pF) z Fast switching
Absolute Maximum Ratings
Symbol Parameter
VDS Drain-Source Volt.
These N-Channel enhancement mode power field effect transistors are produced using DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high ener.
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