BF92N60T Datasheet N-Channel MOSFET

Manufacturer: BYD

Download the BF92N60T datasheet PDF. This datasheet also includes the BF92N60 variant, as both parts are published together in a single manufacturer document.

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BF92N60T n-channel mosfet by BYD - Datasheet Preview — Note: The manufacturer provides a single datasheet file (BF92N60-BYD.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	BF92N60T
Manufacturer	BYD
File Size	275.98 KB
Description	N-Channel MOSFET
Download	BF92N60T Download (PDF)

General Description

These N-Channel enhancement mode power field effect transistors are produced using DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

Overview

BYD Microelectronics Co., Ltd.

BF92N60/BF92N60L/BF92N60R/BF92N60T 600V N-Channel MOSFET.

Key Features

z VDS =600 V z ID =2A z RDS(ON) =3.6Ω TYP(VGS=10V,ID=1A) z Low CRSS (typical 4.5pF) z Fast switching Absolute Maximum Ratings Symbol Parameter VDS ID IDM VGS EAS IAR EAR dv/dt PD Tstg TL Drain-Source Voltage Drain Current(continuous)at Tc=25°C Drain Current (pulsed) (Note1) Gate-Source Voltage SinglePulseAvalanche Energy (Note2) Avalanche Current (Note1) RepetitiveAvalancheEnergy (Note1) PeakD.

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