BF92N60T Datasheet - BYD

N-Channel MOSFET

BF92N60T Features

* z VDS =600 V z ID =2A z RDS(ON) =3.6Ω TYP(VGS=10V,ID=1A) z Low CRSS (typical 4.5pF) z Fast switching Absolute Maximum Ratings Symbol Parameter VDS ID IDM VGS EAS IAR EAR dv/dt PD Tstg TL Drain-Source Voltage Drain Current(continuous)at Tc=25°C Drain Current (pulsed) (Note1) Gate-Source Volta

BF92N60T General Description

These N-Channel enhancement mode power field effect transistors are produced using DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Th.

BF92N60T Datasheet (275.98 KB)

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BF92N60T

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BYD

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275.98 KB

Description:

N-channel mosfet.

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BF92N60T N-Channel MOSFET BYD

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BF92N60T Features

BF92N60T General Description

Datasheet Details

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