BMT352
Key Features
- +5V/330mA at operating bias condition
- Gain = 20.8 dB @ 3500 MHz
- P1dB = 31.5 dBm @ 3500 MHz
- 5G NR ACLR = 18dBm Output Power at -50dBc @ 3500 MHz
- Intergrated interstage matching
- Green/RoHS2-compliant QFN3x3 SMT package Product Description The BMT352 is a high dynamic range two-stage power amplifier, housed in a green/RoHS2 compliant 3x3mm² QFN package. The BMT352 uses a high reliability InGaP/GaAs HBT process technology. The BMT352 is designed for use where high linearity and gain are required. The BMT352 is able to typically delivers 18 dBm output power from 3000 to 4000 MHz while maintaining superior ACLR performance with a few external matching components. All devices are 100% RF/ DC screened.
