BeRex Datasheet | Specifications & PDF Download

BLB04 2500 – 5000 MHz High Linearity LNA Device Features • Operated at 3.3V and 5.0V • 33.0dBm Output IP3 at 0dBm/tone at 3600MHz • 18.0dB Gain at 36

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BNT02 40-6000 MHz BroadBand AMP Device Features • Gain = 17.5 dB @ 3500MHz • OIP3 = 37.5 dBm @ 3500MHz • Output P1 dB = 19.6 dBm @ 3500 MHz • N.F = 1

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2.4GHz Bluetooth® Smart Front End RFIC 8TR8211C 2.4 - 2.525GHz Features • 2.4 - 2.525GHz Frequency Range • High Functionality Front-End RF Integrate

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6-bit Digital Step Attenuator BDA4620 1MHz – 6000MHz Device Features • 6-bit Serial & Parallel Interface • 31.5 dB Control Range 0.5 dB step • Glitc

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BBA31 50-5000 MHz Flat Gain BroadBand AMP Preliminary Datasheet Device Features • Gain = 14.8 dB @ 900MHz • OIP3 = 40.8 dBm @ 900 MHz • Output P1 dB

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DIGITAL VARIABLE GAIN AMPLIFIER BVA305C 40MHz - 5000MHz Device Features • Integrate DSA to Amp Functionality • 40-5000MHz Broadband Performance • 14

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Low Loss / Fast Switching SPDT RF switch BSW7221 5MHz-8500MHz Product Descrip on The BSW7221 is a reflec ve SPDT RF switch that can be used in high p

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High Isolation Absorptive SPDT RF switch BSW6420 50MHz-6000MHz Product Description The BSW6420 is an absorptive SPDT 50Ω matched RF switch supportin

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7-bit Digital Step Attenuator Device Features • 7-bit Serial & Parallel Interface • 31.75 dB Control Range 0.25 dB step • Glitch-safe attenuation stat

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BCF080T HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 800 µm) The BeRex BCF080T is a GaAs Power MESFET whose nominal 0.3 micron gate length a

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BCF030T HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 300 µm) The BeRex BCF030T is a GaAs Power MESFET whose nominal 0.3 micron gate length a

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BG12C 50-4000 MHz Cascadable InGaP HBT Gain Block Device Features • OIP3 = 35.0 dBm @ 900 MHz • Gain = 20.5 dB @ 900 MHz • Output P1 dB = 21.0 dBm @

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BCP120C HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.25µm x 1200µm) The BeRex BCP120C is a GaAs Power pHEMT with a nominal 0.25-micron by 1200-micr

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BVA1762 Ultra Flat Gain wideband DVGA with addressable function 500MHz - 8000MHz Device Features • Integrate DSA to AMP Functionality • 500-8000MHz

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BLB02 1500 – 2700 MHz High Linearity LNA Device Features Part Marking (XX:Wafer number) • Internally matched to 50 ohms • Operated at 3.0V and 5.0V

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2.4GHz Bluetooth® Smart Front End RFIC 8TR8211 2.4 - 2.5GHz Features • 2.4 - 2.5GHz Frequency Range • High Functionality Front-End RF Integrated Cir

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Medium Power Digital Variable Gain Amplifier BVA3143 3300MHz – 3800MHz Product Description The BVA3143 is a digitally controlled variable gain ampli

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BCL015-70 SUPER LOW NOISE PHEMT (0.15µm x 150µm) The BeRex BCL015-70 is a GaAs Super Low Noise Enhancement Mode pHEMT in an industry standard, 70 mil

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BCF020T HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 200 µm) The BeRex BCF020T is a GaAs Power MESFET whose nominal 0.3 micron gate length a

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BCF060T HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 600 µm) The BeRex BCF060T is a GaAs Power MESFET whose nominal 0.3 micron gate length a

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