BeRex Datasheet | Specifications & PDF Download

6-bit Digital Step Attenuator with Addressable Function BDA4630 1MHz – 6000MHz Device Features • 6-bit Serial & Parallel Interface • 31.5 dB Control

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BCF060T HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 600 µm) The BeRex BCF060T is a GaAs Power MESFET whose nominal 0.3 micron gate length a

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7-bit Digital Step Attenuator Device Features • 7-bit Serial & Parallel Interface • 31.75 dB Control Range 0.25 dB step • Glitch-safe attenuation stat

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BCF020T HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 200 µm) The BeRex BCF020T is a GaAs Power MESFET whose nominal 0.3 micron gate length a

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BCP020C-70 HIGH EFFICIENCY HETEROJUNCTION POWER FET (0.25µm x 200µm gate) The BeRex BCP020C-70 is a GaAs Power pHEMT in an industry standard, 70 mil.

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BLB01 500 – 1500 MHz High Linearity LNA Device Features Part Marking (XX:Wafer number) • Internally matched to 50 ohms • Operated at 3.0V and 5.0V

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BCL015-70 SUPER LOW NOISE PHEMT (0.15µm x 150µm) The BeRex BCL015-70 is a GaAs Super Low Noise Enhancement Mode pHEMT in an industry standard, 70 mil

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BeRex 5-4000 MHz Cascadeable InGaP HBT Gain Block Device Features • 33 dBm Output IP3 at 5dBm/tone • 24.9 dB Gain at 900 MHz • 18 dBm P1dB • Highly Re

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High Isolation Absorptive SPDT RF switch BSW6420 50MHz-6000MHz Product Description The BSW6420 is an absorptive SPDT 50Ω matched RF switch supportin

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BCF040T HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 400 µm) The BeRex BCF040T is a GaAs Power MESFET whose nominal 0.3 micron gate length a

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BCF030T HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 300 µm) The BeRex BCF030T is a GaAs Power MESFET whose nominal 0.3 micron gate length a

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BG12C 50-4000 MHz Cascadable InGaP HBT Gain Block Device Features • OIP3 = 35.0 dBm @ 900 MHz • Gain = 20.5 dB @ 900 MHz • Output P1 dB = 21.0 dBm @

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BGS1 50-4000 MHz SILICON GERMANIUM Gain Block Device Features • 3 ~ 3.2V supply • No Dropping Resistor Required • No matching circuit needed • Green/

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BCL016B SUPER LOW NOISE PHEMT CHIP (.15µm x 160µm) The BeRex BCL016B is a GaAs super low noise pHEMT with a nominal 0.15 micron gate length and 160 mi

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BCL016B-343 SUPER LOW NOISE PHEMT IN SOT-343 PACKAGE The BeRex BCL016B-343 is a GaAs super low noise pHEMT in a standard SOT-343 plastic package. It

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DUAL DIGITAL VARIABLE GAIN AMPLIFIER BVA2182 0.5GHz — 3.8GHz Device Features • 48Pin 7 x 7 x 0.9mm QFN Package • Integrates Amp1(Gain Block), DSA1

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BVA1762 Ultra Flat Gain wideband DVGA with addressable function 500MHz - 8000MHz Device Features • Integrate DSA to AMP Functionality • 500-8000MHz

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BVA1761 High Linearity wideband DVGA with addressable function 50MHz - 6000MHz Device Features • Integrate DSA to AMP Functionality • 50-6000MHz Br

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6-bit Digital Step Attenuator BDA4601 1MHz– 4000MHz Device Features • 6-bit Serial & Parallel Interface • 31.5 dB Control Range 0.5 dB step • No pos

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BIF3 5-800 MHz Internally Matched IF Amplifier Device Features • OIP3 = 44.0 dBm @ 70 MHz • Gain = 20.3 dB @ 70 MHz • Output P1 dB = 23.5 dBm @ 70 MH

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