BCF120T Overview
BCF120T HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 1200 µm) The BeRex BCF120T is a GaAs Power MESFET whose nominal 0.3 micron gate length and 1200 micron gate width make the product ideally suited to applications requiring high OIP3 linearity and low phase noise while providing high-gain and medium power from DC to 26.5 GHz. This product is well suited for either wideband or narrow-band applications. The...
BCF120T Key Features
- 28.0 dBm Typical Output Power
- 11.0 dB Typical Power Gain @ 12 GHz
- Low Phase Noise
- 0.3 X 1200 Micron Recessed Gate