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2SA950 PNP Silicon Epitaxial Planar Transistor
for audio power amplifier applications.
The transistor is subdivided into two group, O and Y according to its DC current gain.
On special request, these transistors can be manufactured in different pin configurations.
Absolute Maximum Ratings (Ta=25oC)
Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Range
1. Emitter 2. Collector 3. Base TO-92 Plastic Package Weight approx. 0.19g
Symbol -VCBO -VCEO -VEBO
-IC -IB Ptot Tj TS
Value 35 30 5 800 160 600 150
-55 to +150
Unit V V V mA mA
mW OC OC
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7/15/2011
Characteristics at Tamb=25 OC
Parameter
Symbol
Min.
Typ.
Max.
2SA950 Datasheet
