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Bourns Electronic Solutions

BD647 Datasheet Preview

BD647 Datasheet

NPN SILICON POWER DARLINGTONS

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BD645, BD647, BD649, BD651
NPN SILICON POWER DARLINGTONS
Designed for Complementary Use with
BD646, BD648, BD650 and BD652
62.5 W at 25°C Case Temperature
8 A Continuous Collector Current
Minimum hFE of 750 at 3V, 3 A
TO-220 PACKAGE
(TOP VIEW)
B1
C2
E3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
SYMBOL
VALUE
UNIT
Collector-base voltage (IE = 0)
Collector-emitter voltage (IB = 0)
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
BD645
BD647
BD649
BD651
BD645
BD647
BD649
BD651
VCBO
VCEO
VEBO
IC
ICM
IB
Ptot
Ptot
½LIC2
Tj
Tstg
TL
80
100
120
140
60
80
100
120
5
8
12
0.3
62.5
2
50
-65 to +150
-65 to +150
260
V
V
V
A
A
A
W
W
mJ
°C
°C
°C
NOTES: 1. This value applies for tp 0.3 ms, duty cycle 10%.
2. Derate linearly to 150°C case temperature at the rate of 0.4 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 5 mA, RBE = 100 ,
VBE(off) = 0, RS = 0.1 , VCC = 20 V.
PRODUCT INFORMATION
MAY 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
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Bourns Electronic Solutions

BD647 Datasheet Preview

BD647 Datasheet

NPN SILICON POWER DARLINGTONS

No Preview Available !

www.DataSheet4U.com
BD645, BD647, BD649, BD651
NPN SILICON POWER DARLINGTONS
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN TYP MAX
Collector-emitter
V(BR)CEO breakdown voltage
ICEO
Collector-emitter
cut-off current
ICBO
Collector cut-off
current
IEBO
hFE
VCE(sat)
VBE(sat)
VBE(on)
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
saturation voltage
Base-emitter
voltage
IC = 30 mA
IB = 0
VCE = 30 V
VCE = 40 V
VCE = 50 V
VCE = 60 V
VCB = 60 V
VCB = 80 V
VCB = 100 V
VCB = 120 V
VCB = 40 V
VCB = 50 V
VCB = 60 V
VCB = 70 V
VEB = 5 V
IB = 0
IB = 0
IB = 0
IB = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IC = 0
VCE = 3 V
IB = 12 mA
IB = 50 mA
IB = 50 mA
IC = 3 A
IC = 3 A
IC = 5 A
IC = 5 A
VCE = 3 V
IC = 3 A
(see Note 5)
TC = 150°C
TC = 150°C
TC = 150°C
TC = 150°C
BD645
BD647
BD649
BD651
BD645
BD647
BD649
BD651
BD645
BD647
BD649
BD651
BD645
BD647
BD649
BD651
(see Notes 5 and 6)
(see Notes 5 and 6)
(see Notes 5 and 6)
(see Notes 5 and 6)
(see Notes 5 and 6)
60
80
100
120
750
0.5
0.5
0.5
0.5
0.2
0.2
0.2
0.2
2.0
2.0
2.0
2.0
5
2
2.5
3
2.5
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
UNIT
V
mA
mA
mA
V
V
V
thermal characteristics
RθJC
RθJA
PARAMETER
Junction to case thermal resistance
Junction to free air thermal resistance
MIN TYP MAX UNIT
2.0 °C/W
62.5 °C/W
2
DataSheet4 U .com
PRODUCT INFORMATION
MAY 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.


Part Number BD647
Description NPN SILICON POWER DARLINGTONS
Maker Bourns Electronic Solutions
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BD647 Datasheet PDF






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