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BH616UV8010 - Ultra Low Power/High Speed CMOS SRAM

Description

The BH616UV8010 is a high performance, ultra low power CMOS Static Random Access Memory organized as 524,288 by 16 bits and operates in a wide range of 1.65V to 3.6V supply voltage.

Features

  • Ÿ Wide VCC low operation voltage : 1.65V ~ 3.6V Ÿ Ultra low power consumption : VCC = 3.6V Operation current : 12mA (Max. )at 55ns 2mA (Max. ) at 1MHz Standby current : 2.5uA (Typ. ) at 3.0V/25OC VCC = 1.2V Data retention current : 1.2uA (Typ. ) at 25OC Ÿ High speed access time : -55 55ns (Max. ) at VCC=1.65~3.6V -70 70ns (Max. ) at VCC=1.65~3.6V Ÿ Automatic power down when chip is deselected Ÿ Easy expansion with CE1, CE2 and OE options Ÿ I/O Configuration x8/x16 selectable by LB and UB pin. Ÿ Three.

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Datasheet Details

Part number BH616UV8010
Manufacturer Brilliance Semiconductor
File Size 191.74 KB
Description Ultra Low Power/High Speed CMOS SRAM
Datasheet download datasheet BH616UV8010 Datasheet
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Ultra Low Power/High Speed CMOS SRAM 512K X 16 bit Pb-Free and Green package materials are compliant to RoHS www.DataSheet4U.com BH616UV8010 n FEATURES Ÿ Wide VCC low operation voltage : 1.65V ~ 3.6V Ÿ Ultra low power consumption : VCC = 3.6V Operation current : 12mA (Max.)at 55ns 2mA (Max.) at 1MHz Standby current : 2.5uA (Typ.) at 3.0V/25OC VCC = 1.2V Data retention current : 1.2uA (Typ.) at 25OC Ÿ High speed access time : -55 55ns (Max.) at VCC=1.65~3.6V -70 70ns (Max.) at VCC=1.65~3.6V Ÿ Automatic power down when chip is deselected Ÿ Easy expansion with CE1, CE2 and OE options Ÿ I/O Configuration x8/x16 selectable by LB and UB pin. Ÿ Three state outputs and TTL compatible Ÿ Fully static operation, no clock, no refresh Ÿ Data retention supply voltage as low as 1.
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