BS62LV4006 Datasheet | Brilliance Semiconductor

FEATURES Very Low Power/Voltage CMOS SRAM 512K X 8 bit - Wide Vcc operation voltage : 2.4V ~ 5.5V - Very low power consumption : Vcc = 3.0V C-grade: 29m A (@55ns) operating current I -grade: 30m A (@55ns) operating current C-grade: 24m A (@70ns) operating current I -grade: 25m A (@70ns) operating current 0.45u A (Typ.) CMOS standby current Vcc = 5.0V C-grade: 68m A (@55ns) operating current I -grade: 70m A (@55ns) operating current C-grade: 58m A (@70ns) operating current I -grade: 60m A (@70ns) operating current 2.0u A (Typ.) CMOS standby current - High speed access time : -55 55ns -70 70ns - Automatic power down when chip is deselected - Fully static operation - Data retention supply voltage as low as 1.5V - Easy expansion with CE and OE options - Three state outputs and TTL patible - DESCRIPTION The BS62LV4006 is a high performance, very low power CMOS Static Random Access Memory organized as 524,288 words by 8 bits and operates from a wide range of 2.4V to 5.5V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 0.45u A at 3.0V/25o C and maximum access time of 55ns at 3.0V/85o C. Easy memory expansion is provided by an active LOW chip enable (CE) , and active LOW output enable (OE) and three-state output drivers. The BS62LV4006 has an automatic power down feature , reducing the power consumption significantly when chip is deselected. The BS62LV4006 is available in the JEDEC standard 32L SOP, TSOP , PDIP, TSOP II and STSOP package. - PRODUCT FAMILY PRODUCT FAMILY BS62LV4006TC BS62LV4006STC BS62LV4006SC BS62LV4006EC BS62LV4006PC BS62LV4006TI BS62LV4006STI BS62LV4006SI BS62LV4006EI BS62LV4006PI OPERATING TEMPERATURE Vcc RANGE SPEED ( ns ) 55ns :3.0~5.5V 70ns :2.7~5.5V POWER DISSIPATION ( I CCSB1 , Max ) STANDBY Vcc =5.0V Operating ( I CC , Max ) Vcc = 3.0V Vcc = 3.0V 70ns Vcc =5.0V 70ns PKG TYPE TSOP - 32 STSOP -32 SOP - 32 TSOP2 - 32 PDIP - 32 TSOP - 32...