Part BS62LV4001
Description Low Power/Voltage CMOS SRAM 512K X 8 bit
Manufacturer Brilliance Semiconductor
Size 341.65 KB
Brilliance Semiconductor
BS62LV4001

Overview

BS62LV4001 Wide Vcc operation voltage : 2.4V ~ 5.5V Low power consumption Vcc = 3.0V C-grade: 20mA (Max.) operating current I -grade: 25mA (Max.) operating current 0.25uA (Typ.) CMOS standby current Vcc = 5.0V C-grade: 45mA (Max.) operation current I -grade: 50mA (Max.) operating current 1.5uA (Typ.) CMOS standby current High speed access time : -70 70ns (Max.) at Vcc = 3.0V -10 100ns (Max.) at Vcc = 3.0V Automatic power down when chip is deselected Three state outputs and TTL compatible Fully static operation Data retention supply voltage as low as 1.5V Easy expansion with CE and OE options The BS62LV4001 is a high performance, low power CMOS Static Random Access Memory organized as 524,288 words by 8 bits and operates from a wide range of 2.4V to 5.5V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with maximum access time of 70/ 100ns in 3.0V operation.