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BS62LV4001 - Low Power/Voltage CMOS SRAM 512K X 8 bit

General Description

BS62LV4001 Wide Vcc operation voltage : 2.4V ~ 5.5V Low power consumption Vcc = 3.0V C-grade: 20mA (Max.) operating current I -grade: 25mA (Max.) operating current 0.25uA (Typ.) CMOS standby current Vcc = 5.0V C-grade: 45mA (Max.) operation current I -grade: 50mA (Max.) operati

Key Features

  • S Low Power/Voltage CMOS SRAM 512K X 8 bit.

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Datasheet Details

Part number BS62LV4001
Manufacturer Brilliance Semiconductor
File Size 341.65 KB
Description Low Power/Voltage CMOS SRAM 512K X 8 bit
Datasheet download datasheet BS62LV4001 Datasheet

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BSI „ FEATURES Low Power/Voltage CMOS SRAM 512K X 8 bit „ GENERAL DESCRIPTION BS62LV4001 • Wide Vcc operation voltage : 2.4V ~ 5.5V • Low power consumption Vcc = 3.0V C-grade: 20mA (Max.) operating current I -grade: 25mA (Max.) operating current 0.25uA (Typ.) CMOS standby current Vcc = 5.0V C-grade: 45mA (Max.) operation current I -grade: 50mA (Max.) operating current 1.5uA (Typ.) CMOS standby current • High speed access time : -70 70ns (Max.) at Vcc = 3.0V -10 100ns (Max.) at Vcc = 3.0V • Automatic power down when chip is deselected • Three state outputs and TTL compatible • Fully static operation • Data retention supply voltage as low as 1.