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BS62LV4006 - Very Low Power/Voltage CMOS SRAM 512K X 8 bit

General Description

The BS62LV4006 is a high performance, very low power CMOS Static Random Access Memory organized as 524,288 words by 8 bits and operates from a wide range of 2.4V to 5.5V supply voltage.

Key Features

  • S Very Low Power/Voltage CMOS SRAM 512K X 8 bit BS62LV4006.
  • Wide Vcc operation voltage : 2.4V ~ 5.5V.
  • Very low power consumption : Vcc = 3.0V C-grade: 29mA (@55ns) operating current I -grade: 30mA (@55ns) operating current C-grade: 24mA (@70ns) operating current I -grade: 25mA (@70ns) operating current 0.45uA (Typ. ) CMOS standby current Vcc = 5.0V C-grade: 68mA (@55ns) operating current I -grade: 70mA (@55ns) operating current C-grade: 58mA (@70ns) operating current I -grade.

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Datasheet Details

Part number BS62LV4006
Manufacturer Brilliance Semiconductor
File Size 429.09 KB
Description Very Low Power/Voltage CMOS SRAM 512K X 8 bit
Datasheet download datasheet BS62LV4006 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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( DataSheet : www.DataSheet4U.com ) BSI „ FEATURES Very Low Power/Voltage CMOS SRAM 512K X 8 bit BS62LV4006 • Wide Vcc operation voltage : 2.4V ~ 5.5V • Very low power consumption : Vcc = 3.0V C-grade: 29mA (@55ns) operating current I -grade: 30mA (@55ns) operating current C-grade: 24mA (@70ns) operating current I -grade: 25mA (@70ns) operating current 0.45uA (Typ.) CMOS standby current Vcc = 5.0V C-grade: 68mA (@55ns) operating current I -grade: 70mA (@55ns) operating current C-grade: 58mA (@70ns) operating current I -grade: 60mA (@70ns) operating current 2.0uA (Typ.) CMOS standby current • High speed access time : -55 55ns -70 70ns • Automatic power down when chip is deselected • Fully static operation • Data retention supply voltage as low as 1.