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BS62LV4000 - Very Low Power/Voltage CMOS SRAM 512K X 8 bit

Datasheet Summary

Description

BS62LV4000 Wide Vcc operation voltage : 2.7V ~ 3.6V Very low power consumption : Vcc = 3.0V C-grade: 20mA (Max.) operating current I -grade: 25mA (Max.) operating current 0.5uA (Typ.) CMOS standby current High speed access time : -70 70ns (Max) at Vcc = 3.0V -10 100ns

Features

  • S Very Low Power/Voltage CMOS SRAM 512K X 8 bit.

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Datasheet preview – BS62LV4000

Datasheet Details

Part number BS62LV4000
Manufacturer Brilliance Semiconductor
File Size 213.09 KB
Description Very Low Power/Voltage CMOS SRAM 512K X 8 bit
Datasheet download datasheet BS62LV4000 Datasheet
Additional preview pages of the BS62LV4000 datasheet.

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Full PDF Text Transcription

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BSI „ FEATURES Very Low Power/Voltage CMOS SRAM 512K X 8 bit „ GENERAL DESCRIPTION BS62LV4000 • Wide Vcc operation voltage : 2.7V ~ 3.6V • Very low power consumption : Vcc = 3.0V C-grade: 20mA (Max.) operating current I -grade: 25mA (Max.) operating current 0.5uA (Typ.) CMOS standby current • High speed access time : -70 70ns (Max) at Vcc = 3.0V -10 100ns (Max) at Vcc = 3.0V • Automatic power down when chip is deselected • Three state outputs and TTL compatible • Fully static operation • Data retention supply voltage as low as 1.5V • Easy expansion with CE and OE options The BS62LV4000 is a high performance, very low power CMOS Static Random Access Memory organized as 524,288 words by 8 bits and operates from a wide range of 2.7V to 3.6V supply voltage.
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