2SA1012
Plastic-Encapsulate Transistors (PNP)
ELECTRICAL CHARACTERISTICS @ Ta=25°C unless otherwise specified
Symbol Parameter
Test Conditions
V(BR)CBO Collector-base breakdown voltage
IC = -0.1mA , IE = 0
V(BR)CEO*
V(BR)EBO
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
IC = -10mA , IB = 0
IE = -10μA , IC = 0
ICBO Collector cut-off current
VCB = -50 V , IE = 0
IEBO Emitter cut-off current
VEB = -5 V , IC = 0
hFE(1)
hFE(2)*
DC current gain
VCE = -1 V , IC = -1 A
VCE = -1 V , IC = -3 A
VCE(sat)* Collector-emitter saturation voltage IC = -3 A , IB = -150mA
VBE(sat)* Base-emitter saturation voltage
IC = -3 A , IB = -150mA
fT Transition frequency
VCE = -4 V , IC = -1 A
Cob Collector output capacitance
VCB = -10 V , IE = 0
f = 1.0MHz
ton Turn-on Time
ts Storage time
tf Fall time
VCC = -30 V, IC = -3 A
IB1 = -IB2 = -0.15 A
*Pulse test: tp≤300μs, δ≤0.02.
MIN
-60
-50
-5
70
30
CLASSIFICATION of hFE(1)
Rank
Range
O
70-140
TYP MAX UNIT
V
V
V
-1 μA
-1 μA
240
-0.4 V
1.2 V
60 MHz
170 pF
0.1
1.0 μs
0.1
Y
120-240
Publication Order Number: [2SA1012]
© Bruckewell Technology Corporation Rev. A -2014
