Galaxy Century Microelectronics 2SA1012
PNP Epitaxial Silicon Transistor
| Part No. | 2SA1012 |
|---|---|
| Datasheet | 2SA1012 Download |
| Manufacturer | Galaxy Century Microelectronics |
| Description | PNP Epitaxial Silicon Transistor |
| Buy | Stock & Price |
FEATURES
● Fast switching speed● Low collector-to-emitter saturation voltage
● RoHS compliant with Halogen-free
MECHANICAL DATA
● Case: TO-220AB● Molding Compound: UL Flammability Classification Rating 94V-0
● Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208 TO-220AB Ordering Information Part Number 2SA1012-O 2SA1012-Y Package TO-220AB TO-220AB Shipping Quantity 50 pcs / Tube 50 pcs / Tube Marking Code 2SA1012 2SA1012
MAXIMUM RATINGS
(@ TA = 25°C unless otherwise specified) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Current (Continuous) Collector Current (Pulse) Symbol VCBO VCEO VEBO IC ICM Value -60 -50 -5 -5 -8 Unit V V V A A Thermal Characteristics Parameter Power Dissipation(TA = 25°C) Thermal Resistance Junction-to-Air Junction Temperature Storage Temperature Range Symbol PD RθJA TJ TSTG Value 2 62.5 -55 ~ +150 -55 ~ +150 Unit W °C/W °C °C STM0036A: March 2025 [2.0] 1 PNP Epitaxial Planar Silicon Transistors 2SA1012ELECTRICAL CHARACTERISTICS
(@ TA = 25°C unless otherwise specified) Parameter Symbol Test Condition Min.
