Datasheet4U Logo Datasheet4U.com

2SA1012 - PNP Transistor

Key Features

  • Capable of 25 Watts of Power Dissipation.
  • Collector-current -5.0A and Collector-base Voltage -60V.
  • Operating and storage junction temperature range: -55к to +150к.
  • Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates RoHS Compliant. See ordering information).
  • Epoxy meets UL 94 V-0 flammability rating.
  • Moisure Sensitivity Level 1 Electrical Characteristics @ 25OC Unless Otherwise Specified Symbol Parameter Min Max Units OFF.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SA1012 TRANSISITOR Toshiba Semiconductor
2SA1012 PNP Epitaxial Silicon Transistor GME
2SA1012 PNP Transistor SEMTECH
2SA1012 PNP SILICON TRANSISTOR UTC
2SA1012 TO-252 PNP Transistor INCHANGE

Other Datasheets by Micro Commercial Components

Part Number Description
2SA1013-O PNP Transistor
2SA1013-R PNP Transistor
2SA1013-Y PNP Transistor
2SA1015-GR PNP Transistor
2SA1015-O PNP Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SA1012 Features • Capable of 25 Watts of Power Dissipation. • Collector-current -5.0A and Collector-base Voltage -60V • Operating and storage junction temperature range: -55к to +150к • Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 Electrical Characteristics @ 25OC Unless Otherwise Specified Symbol Parameter Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Collector-Emitter Breakdown Voltage (IC=-1.