2SA1012 Datasheet and Specifications PDF

The 2SA1012 is a TRANSISITOR.

Key Specifications

Max Operating Temp150 °C

2SA1012 Datasheet

2SA1012 Datasheet (Toshiba)

Toshiba

2SA1012 Datasheet Preview

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2SA1012 Datasheet (Unisonic Technologies)

Unisonic Technologies

2SA1012 Datasheet Preview

, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. UNISONIC TECHNOLOGIES CO., LTD 4 of 4 QW-R203-01.

*Low Collector Saturation Voltage VCE(SAT)=-0.4V(max.) At IC=-3A *High Speed Switching Time: tS=1.0s (Typ.) *Complementary To 2SC2562
* ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 2SA1012L-x-TA3-T 2SA1012G-x-TA3-T TO-220 2SA1012L-x-TF3-T 2SA1012G-x-TF3-T TO-220F .

2SA1012 Datasheet (Galaxy Microelectronics)

Galaxy Microelectronics

2SA1012 Datasheet Preview

PNP Epitaxial Planar Silicon Transistors 2SA1012 Features  Fast switching speed  Low collector-to-emitter saturation voltage  RoHS compliant with Halogen-free Mechanical Data  Case: TO-220AB  Mo.


* Fast switching speed
* Low collector-to-emitter saturation voltage
* RoHS compliant with Halogen-free Mechanical Data
* Case: TO-220AB
* Molding Compound: UL Flammability Classification Rating 94V-0
* Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208 TO-220AB Ordering.

2SA1012 Datasheet (SEMTECH)

SEMTECH

2SA1012 Datasheet Preview

2SA1012 PNP Silicon Epitaxial Planar Transistor for high current switching applications. The transistor is subdivided into two group, O and Y, according to its DC current gain. Absolute Maximum Ratin.

hFE Y hFE hFE -V(BR)CEO -ICBO -IEBO -VCE(sat) -VBE(sat) fT Cob 70 120 30 50 - - - - - Typ. Max. - 140 - 240 - - - - - 1 - 1 - 0.4 - 1.2 60 - 170 - Unit V µA µA V V MHz pF SEMTECH ELECTRONICS LTD. ® Dated : 17/09/2016 Rev: 01 2SA1012 SEMTECH ELECTRONICS LTD. ® Da.

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