Leading Planar Technology for Low Gate Charge / Fast Switching.
2.5 V Rated for Low Voltage Gate Drive
+0.12.4 -0.1
0-0.1 +0.10.38
-0.1.
Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note.1)
TA=25℃ TA=85℃
Pulsed Drain Current @ tP=10us
Power Dissipation
(Note.1)
Thermal Resistance. Junct.
📁 Related Datasheet
NTR4501N - N-Channel Power MOSFET (ON Semiconductor)
NTR4502P - P-Channel Power MOSFET (ON Semiconductor)
