NTR4501NT1G - N-Channel MOSFET

Key Features

s.
VDS (V) = 20V.
ID = 3.2 A (VGS = 4.5V).
RDS(ON) ＜ 70mΩ (VGS = 4.5V).
RDS(ON) ＜ 85mΩ (VGS = 2.5V).
Leading Planar Technology for Low Gate Charge / Fast Switching.
2.5 V Rated for Low Voltage Gate Drive +0.12.4 -0.1 0-0.1 +0.10.38 -0.1.
Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note.1) TA=25℃ TA=85℃ Pulsed Drain Current @ tP=10us Power Dissipation (Note.1) Thermal Resistance. Junct.

NTR4501NT1G n-channel mosfet by CANYU - Datasheet Preview

Datasheet Details

Part number	NTR4501NT1G
Manufacturer	CANYU
File Size	1.50 MB
Description	N-Channel MOSFET
Datasheet	NTR4501NT1G Datasheet

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NTR4501NT1G N-Channel MOSFET SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.10.97 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 1. Gate 2. Source 3. Drain ■ Features ● VDS (V) = 20V ● ID = 3.2 A (VGS = 4.5V) ● RDS(ON) ＜ 70mΩ (VGS = 4.5V) ● RDS(ON) ＜ 85mΩ (VGS = 2.5V) ● Leading Planar Technology for Low Gate Charge / Fast Switching ● 2.5 V Rated for Low Voltage Gate Drive +0.12.4 -0.1 0-0.1 +0.10.38 -0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note.1) TA=25℃ TA=85℃ Pulsed Drain Current @ tP=10us Power Dissipation (Note.1) Thermal Resistance.Junction- to-Ambient (Note.1) (Note.2) Lead Temperature for Soldering Purposes (Note.