Click to expand full text
CS55N50
N-Channel Trench Power MOSFET
General Description
The CS55N50 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching .
Features
● VDS=55V; ID=105A@ VGS=10V; RDS(ON)<6.0mΩ @ VGS=10V
● Ultra Low On-Resistance ● High UIS and UIS 100% Test
Application
● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply
To-220 Top View
Schematic Diagram
VDS = 55 V ID = 105 A RDS(ON) = 5.0 mΩ
Package Marking and Ordering Information
Device Marking
Device
Device Package
CS55N50
CS55N50
TO-220
Reel Size -
Table 1.
CS55N50 Datasheet
