CS55N50 Datasheet, CASS

* VDS=55V; ID=105A@ VGS=10V; RDS(ON)<6.0mΩ @ VGS=10V
* Ultra Low On-Resistance
* High UIS and UIS 100% Test Application
* Hard Switched and High Frequency.

Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching . Features
* VDS=55V; ID=105A@ VGS=.

The CS55N50 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching . Features
* VDS=55V; ID=105A@ VGS=10V; RDS(ON)<6.0mΩ @ VGS=10V.