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2N699 Datasheet NPN SILICON EPITAXIAL TRANSISTOR

Manufacturer: CDIL

Datasheet Details

Part number 2N699
Manufacturer CDIL
File Size 143.00 KB
Description NPN SILICON EPITAXIAL TRANSISTOR
Download 2N699 Download (PDF)

General Description

SYMBOL Collector Emitter Voltage VCER Collector Base Voltage VCBO Emitter Base Voltage VEBO Total Device Dissipation @ Ta=25ºC PD Derate Above 25ºC Total Device Dissipation@ Tc=25ºC PD Derate Above 25ºC Operating And Storage Junction Tj, Tstg Temperature Range THERMAL RESISTANCE Junction to Ambient Junction to Case Rth(j-a) Rth(j-c) ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION Collector Emitter Breakdown Voltage BVCER* IC=100mA,RBE=10Ω Collector Cut off Current ICBO VCB=60V, IE=0 VCB=60V, IE=0,Ta=150ºC Emitter Cut off Current IEBO VEB =2V, IC=0 DC Current Gain hFE* IC=150mA,VCE=10V Collector Emitter Saturation Voltage VCE(Sat) * IC=150mA,IB

Overview

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON EPITAXIAL TRANSISTOR 2N 699 TO-39 Metal Can Package General Purpose Transistor ABSOLUTE MAXIMUM RATINGS (Ta=25ºC.