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2N699 - NPN silicon annular transistor

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MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Total Device Dissipation (5 Ta = 25°C Derate above 25°C @Total Device Dissipation Tc = 25°C Derate above 25°C Operating and Storage Temperature Temperature Range Symbol VCER VCBO Vebo PD PD Tj, Tstg Value 80 120 5.0 0.6 4.0 2.0 13.3 -65 to +200 Unit Vdc Vdc Vdc Watt mW/°C Watts mW/°C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Symbol R&jc R&JA Max 75 250 Unit °C/W °c/w ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted.