• Part: 2N699
  • Description: NPN silicon annular transistor
  • Manufacturer: Motorola Semiconductor
  • Size: 111.41 KB
Download 2N699 Datasheet PDF
2N699 page 2
Page 2

Datasheet Summary

MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Total Device Dissipation (5 Ta = 25°C Derate above 25°C @Total Device Dissipation Tc = 25°C Derate above 25°C Operating and Storage Temperature Temperature Range Symbol VCER VCBO Vebo PD Tj, Tstg Value 80 120 5.0 0.6 4.0 2.0 13.3 -65 to +200 Unit Vdc Vdc Vdc Watt mW/°C Watts mW/°C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Symbol R&jc R&JA Max 75 250 Unit °C/W °c/w ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted.) Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (1) dC = 100...