Datasheet Summary
2N696 (SILICON) 2N697
CASE 31
(TO-5)
NPN silicon annular transistors designed for smallsignal amplifier and general purpose switching applications.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
VCER
Vdc
Collector-Base Voltage
Vdc
Emitter-Base Voltage
Vdc
Total Device Dissipation @ TA = 25°C PD Derate above 25°C
Total Device Dissipation @ TC = 25°C PD Derate above 25°C
Operating and Storage Junction Temperature Range
TJ' Tstg
0.6 13.3 2.0 13.3 -65 to +200 watt mWrC Watts mWrC °c
ELECTRICAL CHARACTERISTICS (TA = 250 C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage" (Ic = 100...
