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2N697 - NPN Transistor

Download the 2N697 datasheet PDF. This datasheet also covers the 2N696 variant, as both devices belong to the same npn transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (2N696-Motorola.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N696 (SILICON) 2N697 CASE 31 (TO-5) NPN silicon annular transistors designed for smallsignal amplifier and general purpose switching applications. MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCER 40 Vdc Collector-Base Voltage VCB 60 Vdc Emitter-Base Voltage VEB 5.0 Vdc Total Device Dissipation @ TA = 25°C PD Derate above 25°C Total Device Dissipation @ TC = 25°C PD Derate above 25°C Operating and Storage Junction Temperature Range TJ' Tstg 0.6 13.3 2.0 13.3 -65 to +200 watt mWrC Watts mWrC °c ELECTRICAL CHARACTERISTICS (TA = 250 C unless otherwise noted.