TT 2N697
GENERAL PURPOSE SILICON NPN TRANSISTOR
APPLICATIONS
● Screening Options AvailableABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise stated) VCBO Collector – Base Voltage 60V VCER Collector – Emitter Voltage 40V VEBO Emitter – Base Voltage 5.0V PD Total Power Dissipation at TA = 25°C 600mW Derate Above 25°C 4.0mW/°C PD Total Power Dissipation at TC = 25°C 2.0W Derate Above 25°C 13.3mW/°C TJ Junction Temperature Range -65 to +200°C Tstg Storage Temperature Range -65 to +200°C THERMAL PROPERTIES Symbols Parameters RθJA Thermal Resistance, Junction To Ambient RθJC Thermal Resistance, Junction To Case Max. 290 88 Units °C/W °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to pres