Datasheet4U.com

2N697 Datasheet PDF

TT 2N697

GENERAL PURPOSE SILICON NPN TRANSISTOR

Part No. 2N697
Datasheet 2N697 Download
Manufacturer
TT
Description GENERAL PURPOSE SILICON NPN TRANSISTOR
Buy Stock & Price
2N697 datasheet page 1 preview

APPLICATIONS

● Screening Options Available

ABSOLUTE MAXIMUM RATINGS

(TA = 25°C unless otherwise stated) VCBO Collector – Base Voltage 60V VCER Collector – Emitter Voltage 40V VEBO Emitter – Base Voltage 5.0V PD Total Power Dissipation at TA = 25°C 600mW Derate Above 25°C 4.0mW/°C PD Total Power Dissipation at TC = 25°C 2.0W Derate Above 25°C 13.3mW/°C TJ Junction Temperature Range -65 to +200°C Tstg Storage Temperature Range -65 to +200°C THERMAL PROPERTIES Symbols Parameters RθJA Thermal Resistance, Junction To Ambient RθJC Thermal Resistance, Junction To Case Max. 290 88 Units °C/W °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to pres
2N697 page 2 preview