Datasheet Summary
CASE 79, STYLE 1
TO-39 (TO-205AD)
GENERAL PURPOSE TRANSISTOR
NPN SILICON
Refer to 2N2218 for graphs.
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
=Total Device Dissipation (a TA 25°C
Derate above 25°C Total Device Dissipation (a Tq = 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
Symbol VCER v CBO Vebo PD
Pd
TJ< Tstg
Value 40 60 5.0
0.6 4.0 2.0 13.3
- 65 to + 200
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted.
OFF CHARACTERISTICS
Characteristic
Collector-Emitter Breakdown Voltaged) dc = 100 mAdc, Rbe = 10 ohms)
Collector-Base Breakdown Voltage dC = 100 /xAdc, l£ = 0)
Emitter-Base Breakdown...
