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TECHNICAL DATA
NPN MEDIUM POWER SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/99 Devices 2N696 2N696S 2N697 2N697S Qualified Level JAN
MAXIMUM RATINGS Ratings
Collector-Base Voltage Emitter-Base Voltage Total Power Dissipation @ TA = 250C (1) @ TC = 250C (2) Operating & Storage Junction Temperature Range
Symbol
VCBO VEBO PT TJ, Tstg Symbol RθJC
Value
60 5.0 0.6 2.0 -65 to +200 Max. 0.075
Units
Vdc Vdc W W 0 C Unit C/mW
THERMAL CHARACTERISTICS
Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly 4.0 mW/0C for TA > 250C 2) Derate linearly 13.3 mW/0C for TC > 250C
0
TO-5*
*See appendix A for package outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics Symbol V(BR)CER ICBO IEBO Min. Max. Unit Vdc 10 0.
2N696S Datasheet
