2N696 - NPN Transistor

Motorola

Datasheet Details

Part number	2N696
Manufacturer	Motorola
File Size	64.61 KB
Description	NPN Transistor
Datasheet	2N696 Datasheet
Additional preview pages of the 2N696 datasheet.

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Full PDF Text Transcription

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2N696 (SILICON) 2N697 CASE 31 (TO-5) NPN silicon annular transistors designed for smallsignal amplifier and general purpose switching applications. MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCER 40 Vdc Collector-Base Voltage VCB 60 Vdc Emitter-Base Voltage VEB 5.0 Vdc Total Device Dissipation @ TA = 25°C PD Derate above 25°C Total Device Dissipation @ TC = 25°C PD Derate above 25°C Operating and Storage Junction Temperature Range TJ' Tstg 0.6 13.3 2.0 13.3 -65 to +200 watt mWrC Watts mWrC °c ELECTRICAL CHARACTERISTICS (TA = 250 C unless otherwise noted.

Published: Nov 14, 2018 |