| Part Number | 2N696 Datasheet |
|---|---|
| Manufacturer | Central Semiconductor |
| Overview | The CENTRAL SEMICONDUCTOR 2N696 is a Silicon NPN Transistor, mounted in a hermetically sealed metal package, designed for general purpose amplifier and switching applications. MAXIMUM RATINGS (TA=25°C. 2N696 NPN SILICON TRANSISTOR TO-39 PACKAGE - MECHANICAL OUTLINE A B D C E DIMENSIONS INCHES MILLIMETERS MIN MAX MIN MAX 0.335 0.370 8.51 9.40 0.315 0.335 8.00 8.51 0.040 1.02 0.240 0.260 6.10 6.60 0.500 12.70 0.016 0.021 0.41 0.53 0.200 5.08 0.100 2.54 0.028 0.034 0.71 0.86 0.029 0.045 0.74 1.14. |
2N696 Datasheet and Specifications PDF
The 2N696 is a NPN SILICON TRANSISTOR.
| Part Number | 2N696 Datasheet |
|---|---|
| Description | (2N696 / 2N697) NPN Transistor |
| Manufacturer | Microsemi |
| Overview | TECHNICAL DATA NPN MEDIUM POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/99 Devices 2N696 2N696S 2N697 2N697S Qualified Level JAN MAXIMUM RATINGS Ratings Collecto. ON CHARACTERISTICS (3) Forward-Current Transfer Ratio IC = 150 mAdc, VCE = 10 Vdc IC = 500 mAdc, VCE = 10 Vdc Collector-Emitter Saturation Voltage IC = 150 mAdc, IB = 15 mAdc Base-Emitter Saturation Voltage IC = 150 mAdc, IB = 15 mAdc 2N696,s 2N697,s 2N696,s 2N697,s 20 40 12.5 20.0 0.3 60 120 hFE . |
| Part Number | 2N696 Datasheet |
|---|---|
| Description | NPN Transistor |
| Manufacturer | Motorola Semiconductor |
| Overview |
2N696 (SILICON) 2N697
CASE 31
(TO-5)
NPN silicon annular transistors designed for smallsignal amplifier and general purpose switching applications.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Coll.
.LAdc 1.0
-
100
ON CHARACTERISTICS DC Current Gain. (IC = 150 mAdc, VCE = 10 Vdc)
Collector-Emitter Saturation Voltage * (IC = 150 mAdc, ~ = 15 mAdc) Base-Emitter Saturation Voltage * (IC = 150 mAdc, IB = 15 mAdc) 2N696 2N697 hFE * 20 . 40 VCE(sat) - VBE(sat)* - - 60 120 Vdc 1.5 Vdc 1.3 D. |
| Part Number | 2N696 Datasheet |
|---|---|
| Description | NPN SILICON TRANSISTOR |
| Manufacturer | Seme LAB |
| Overview |
2N696
MECHANICAL DATA Dimensions in mm (inches)
8.51 (0.34) 9.40 (0.37)
7.75 (0.305) 8.51 (0.335)
NPN SILICON TRANSISTOR
6.10 (0.240) 6.60 (0.260)
12.70 (0.500)
min.
(00.0.8395)max.
0.41 (0.016) .
* SILICON PLANAR EPITAXIAL NPN TRANSISTOR * SCREENING OPTIONS AVAILABLE APPLICATIONS: * General Purpose Amplifier * Switching Circuits 45° TO *39(TO205AD) METAL PACKAGE Underside View PIN 1 * Emitter PIN 2 * Base PIN 3 * Collector ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) V. |