Seme LAB 2N696
NPN SILICON TRANSISTOR
MECHANICAL DATA
Dimensions in mm (inches) 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) NPN SILICON TRANSISTOR 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. (00.0.8395)max. 0.41 (0.016) 0.53 (0.021) dia. 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 5.08 (0.200) typ. 2 13 2.54 (0.100)FEATURES
● SILICON PLANAR EPITAXIAL NPN TRANSISTOR● SCREENING OPTIONS AVAILABLE
APPLICATIONS
:● General Purpose Amplifier
● Switching Circuits 45° TO–39(TO205AD) METAL PACKAGE Underside View PIN 1 – Emitter PIN 2 – Base PIN 3 – Collector
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25°C unless otherwise stated) VCBO Collector – Base Voltage 60V VCER Collector – Emitter Voltage (IB = 0) 40V VEBO Emitter – Base Voltage (IB = 0) 5V PD Total Device Dissipation @ TA = 25°C 0.6W PD Total Device Dissipation @ TC = 25°C 2.0W TJ , TSTG Operating and Storage Junction Temperature Range –65 to +200°C RθJA Thermal Resistance Junction to Ambient 292°C/