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2N697S - (2N696 / 2N697) NPN Transistor

Download the 2N697S datasheet PDF. This datasheet also covers the 2N697 variant, as both devices belong to the same (2n696 / 2n697) npn transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (2N697_MicrosemiCorporation.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Microsemi (now Microchip Technology)

Part Number Description
2N697 (2N696 / 2N697) NPN Transistor
2N696 (2N696 / 2N697) NPN Transistor
2N696S (2N696 / 2N697) NPN Transistor
2N6051 PNP DARLINGTON POWER SILICON TRANSISTOR
2N6052 PNP DARLINGTON POWER SILICON TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet.co.kr TECHNICAL DATA NPN MEDIUM POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/99 Devices 2N696 2N696S 2N697 2N697S Qualified Level JAN MAXIMUM RATINGS Ratings Collector-Base Voltage Emitter-Base Voltage Total Power Dissipation @ TA = 250C (1) @ TC = 250C (2) Operating & Storage Junction Temperature Range Symbol VCBO VEBO PT TJ, Tstg Symbol RθJC Value 60 5.0 0.6 2.0 -65 to +200 Max. 0.075 Units Vdc Vdc W W 0 C Unit C/mW THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly 4.0 mW/0C for TA > 250C 2) Derate linearly 13.3 mW/0C for TC > 250C 0 TO-5* *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol V(BR)CER ICBO IEBO Min. Max. Unit Vdc 10 0.