Continental Device India 2N697
NPN SILICON EPITAXIAL TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
(Ta=25ºC unless specified otherwise)DESCRIPTION
SYMBOL Collector Emitter Voltage VCER Collector Base Voltage VCBO Emitter Base Voltage VEBO Power Dissipation @ Ta=25ºC PD Derate Above 25ºC Power Dissipation@ Tc=25ºC PD Derate Above 25ºC Operating And Storage Junction Tj, Tstg Temperature RangeELECTRICAL CHARACTERISTICS
(Ta=25ºC unless specified otherwise)DESCRIPTION
SYMBOL TEST CONDITION Collector Base Breakdown Voltage BVCBO IC=100µA,IE=0 Collector Emitter Breakdown Voltage BVCER* IC=100mA,RBE=10Ω Emiter Base Breakdown Voltage BVEBO IE=100µA, IC=0 Collector Cut off Current ICBO VCB=30V, IE=0 VCB=30V, IE=0,Ta=150ºC DC Current Gain hFE* IC=150mA,VCE=10V Collector Emitter Saturation Voltage VCE(Sat) * IC=150mA,IB=15mA Base Emitter Saturation Voltage VBE(Sat) * IC