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2N697 - NPN SILICON EPITAXIAL TRANSISTOR

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SYMBOL Collector Emitter Voltage VCER Collector Base Voltage VCBO Emitter Base Voltage VEBO Power Dissipation @ Ta=25ºC PD Derate Above 25ºC Power Dissipation@ Tc=25ºC PD Derate Above 25ºC Operating And Storage Junction Tj, Tstg Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25ºC

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Datasheet Details

Part number 2N697
Manufacturer CDIL
File Size 138.55 KB
Description NPN SILICON EPITAXIAL TRANSISTOR
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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON EPITAXIAL TRANSISTOR 2N 697 TO-39 Metal Can Package ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL Collector Emitter Voltage VCER Collector Base Voltage VCBO Emitter Base Voltage VEBO Power Dissipation @ Ta=25ºC PD Derate Above 25ºC Power Dissipation@ Tc=25ºC PD Derate Above 25ºC Operating And Storage Junction Tj, Tstg Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION Collector Base Breakdown Voltage BVCBO IC=100µA,IE=0 Collector Emitter Breakdown Voltage BVCER* IC=100mA,RBE=10Ω Emiter Base Breakdown Voltage BVEBO IE=100µA, IC=0 Collector Cut off Current ICBO VC
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