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2N699 Datasheet NPN Silicon Epitaxial Transistor

Manufacturer: CDIL

Overview: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified pany NPN SILICON EPITAXIAL TRANSISTOR 2N 699 TO-39 Metal Can Package General Purpose Transistor ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless.

Datasheet Details

Part number 2N699
Manufacturer CDIL
File Size 143.00 KB
Description NPN SILICON EPITAXIAL TRANSISTOR
Datasheet 2N699-CDIL.pdf

General Description

SYMBOL Collector Emitter Voltage VCER Collector Base Voltage VCBO Emitter Base Voltage VEBO Total Device Dissipation @ Ta=25ºC PD Derate Above 25ºC Total Device Dissipation@ Tc=25ºC PD Derate Above 25ºC Operating And Storage Junction Tj, Tstg Temperature Range THERMAL RESISTANCE Junction to Ambient Junction to Case Rth(j-a) Rth(j-c) ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION Collector Emitter Breakdown Voltage BVCER* IC=100mA,RBE=10Ω Collector Cut off Current ICBO VCB=60V, IE=0 VCB=60V, IE=0,Ta=150ºC Emitter Cut off Current IEBO VEB =2V, IC=0 DC Current Gain hFE* IC=150mA,VCE=10V Collector Emitter Saturation Voltage VCE(Sat) * IC=150mA,IB

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