Continental Device India 2N699
NPN SILICON EPITAXIAL TRANSISTOR
| Part No. | 2N699 |
|---|---|
| Datasheet | 2N699 Download |
| Manufacturer |  Continental Device India |
| Description | NPN SILICON EPITAXIAL TRANSISTOR |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(Ta=25ºC unless specified otherwise)DESCRIPTION
SYMBOL Collector Emitter Voltage VCER Collector Base Voltage VCBO Emitter Base Voltage VEBO Total Device Dissipation @ Ta=25ºC PD Derate Above 25ºC Total Device Dissipation@ Tc=25ºC PD Derate Above 25ºC Operating And Storage Junction Tj, Tstg Temperature Range THERMAL RESISTANCE Junction to Ambient Junction to Case Rth(j-a) Rth(j-c)ELECTRICAL CHARACTERISTICS
(Ta=25ºC unless specified otherwise)DESCRIPTION
SYMBOL TEST CONDITION Collector Emitter Breakdown Voltage BVCER* IC=100mA,RBE=10Ω Collector Cut off Current ICBO VCB=60V, IE=0 VCB=60V, IE=0,Ta=150ºC Emitter Cut off Current IEBO VEB =2V, IC=0 DC Current Gain hFE* IC=150mA,VCE=10V Collector Emitter Saturation Voltage VCE(Sat) * IC=150mA,IB
